RF1S50N06SM Datasheet | Intersil

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 File Number 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49018. Features - 50A, 60V - rDS(ON) = 0.022Ω - Temperature pensating PSPICE® Model - Peak Current vs Pulse Width...