RF1S50N06 - Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

Product Overview

Harris

Datasheet Details

Part number	RF1S50N06
Manufacturer	Harris
File Size	77.46 KB
Description	Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Datasheet	RF1S50N06 Datasheet
Additional preview pages of the RF1S50N06 datasheet.

Product details

Description

Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process.This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.These transistors

Features

50A, 60V.
rDS(ON) = 0.022Ω.
Temperature Compensating PSPICE Model.
Peak Current vs Pulse Width Curve.
UIS Rating Curve.
+175oC Operating Temperature.

📁 Similar Datasheet

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Published: Dec 23, 2014 |