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RF1S50N06 Datasheet Avalanche Rated N-channel Enhancement-mode Power MOSFETs

Manufacturer: Harris

Overview: SEMICONDUCTOR RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM December 1995 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power.

Datasheet Details

Part number RF1S50N06
Manufacturer Harris
File Size 77.46 KB
Description Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Datasheet RF1S50N06-Harris.pdf

General Description

Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process.

This process, which uses

Key Features

  • 50A, 60V.
  • rDS(ON) = 0.022Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • +175oC Operating Temperature.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Intersil Corporation Logo RF1S50N06LESM 50A/ 60V/ 0.022 Ohm/ Logic Level N-Channel Power MOSFETs Intersil Corporation
Fairchild Semiconductor Logo RF1S50N06SM 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs Fairchild Semiconductor
Intersil Corporation Logo RF1S50N06SM 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs Intersil Corporation
VBsemi Logo RF1S50N06SM N-Channel 60V MOSFET VBsemi

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