Datasheet4U Logo Datasheet4U.com

RF1S50N06SM - Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

Download the RF1S50N06SM datasheet PDF. This datasheet also covers the RF1S50N06 variant, as both devices belong to the same avalanche rated n-channel enhancement-mode power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process.

Key Features

  • 50A, 60V.
  • rDS(ON) = 0.022Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • +175oC Operating Temperature.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RF1S50N06-Harris.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RF1S50N06SM
Manufacturer Harris
File Size 77.46 KB
Description Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Datasheet download datasheet RF1S50N06SM Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RF1S50N06SM 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs Fairchild Semiconductor
RF1S50N06SM 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs Intersil Corporation
RF1S50N06SM N-Channel 60V MOSFET VBsemi
RF1S50N06LESM 50A/ 60V/ 0.022 Ohm/ Logic Level N-Channel Power MOSFETs Intersil Corporation
RF1S22N10SM 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs Fairchild Semiconductor

Other Datasheets by Harris

Part Number Description
RF1S50N06 Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
RF1S540 N-Channel Power MOSFETs
RF1S540SM N-Channel Power MOSFETs
RF1S30N06LE N-Channel Enhancement-Mode Power MOSFETs
RF1S30N06LESM N-Channel Enhancement-Mode Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM December 1995 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features • 50A, 60V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.