These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors.
The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation.
Key Features
25A and 28A, 80V and 100V.
rDS(ON) = 0.077Ω and 0.100Ω.
Single Pulse Avalanche Energy Rated.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM.
Full PDF Text Transcription for RF1S540 (Reference)
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Semiconductor IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Description These are N-Channel e...
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d 0.100 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation. All of these po wer MOSFETs are designed f or applications such as s witching regulators, switching convertors, motor dr ivers, relay drivers, and dr ivers for high po wer bipolar s witching tr ansistors requir ing high speed and lo w gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type
RF1S540 Datasheet
