RF1S540SM Datasheet | Harris

Semiconductor IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation. All of these po wer MOSFETs are designed f or applications such as s witching regulators, switching convertors, motor dr ivers, relay drivers, and dr ivers for high po wer bipolar s witching tr ansistors requir ing high speed and lo w gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17421. November 1997 Features - 25A and 28A, 80V and 100V - r DS(ON) = 0.077Ω and 0.100Ω - Single Pulse Avalanche Energy Rated - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Ordering Information PART NUMBER IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB TO-262AA TO-263AB BRAND IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM Symbol NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File...