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RF1S540SM - N-Channel Power MOSFETs

Download the RF1S540SM datasheet PDF. This datasheet also covers the RF1S540 variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors.

The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation.

Key Features

  • 25A and 28A, 80V and 100V.
  • rDS(ON) = 0.077Ω and 0.100Ω.
  • Single Pulse Avalanche Energy Rated.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RF1S540-Harris.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RF1S540SM
Manufacturer Harris
File Size 142.43 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet RF1S540SM Datasheet

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Other Datasheets by Harris

Part Number Description
RF1S540 N-Channel Power MOSFETs
RF1S50N06 Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
RF1S50N06SM Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
RF1S30N06LE N-Channel Enhancement-Mode Power MOSFETs
RF1S30N06LESM N-Channel Enhancement-Mode Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Semiconductor IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors. The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation. All of these po wer MOSFETs are designed f or applications such as s witching regulators, switching convertors, motor dr ivers, relay drivers, and dr ivers for high po wer bipolar s witching tr ansistors requir ing high speed and lo w gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17421.