RF1S30N06LE - N-Channel Enhancement-Mode Power MOSFETs

Product Overview

Harris

Datasheet Details

Part number	RF1S30N06LE
Manufacturer	Harris
File Size	90.96 KB
Description	N-Channel Enhancement-Mode Power MOSFETs
Datasheet	RF1S30N06LE Datasheet
Additional preview pages of the RF1S30N06LE datasheet.

Product details

Description

The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.

Features

30A, 60V.
rDS(ON) = 0.047Ω.
2kV ESD Protected.
Temperature Compensating PSPICE Model.
Peak Current vs Pulse Width Curve.
UIS Rating Curve.

📁 Similar Datasheet

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Other Datasheets by Harris

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Published: May 17, 2015 |