RF1S30N06LE Overview
Description
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
Key Features
- rDS(ON) = 0.047Ω
- 2kV ESD Protected
- Temperature Compensating PSPICE Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve DRAIN (FLANGE) JEDEC TO-262AA
