| Part Number | RF1S30N06LE Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gi.
* 30A, 60V * rDS(ON) = 0.047Ω * 2kV ESD Protected * Temperature Compensating PSPICE Model * Peak Current vs Pulse Width Curve * UIS Rating Curve DRAIN (FLANGE) JEDEC TO-262AA Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET proce. |
RF1S30N06LE Datasheet and Specifications PDF
The RF1S30N06LE is a 30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs.
Key Specifications
| Max Operating Temp | 175 °C |
|---|
| Part Number | RF1S30N06LE Datasheet |
|---|---|
| Description | N-Channel Enhancement-Mode Power MOSFETs |
| Manufacturer | Harris |
| Overview |
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gi.
* 30A, 60V * rDS(ON) = 0.047Ω * 2kV ESD Protected * Temperature Compensating PSPICE Model * Peak Current vs Pulse Width Curve * UIS Rating Curve Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feat. |