RF1S30N06LESM - 30A 60V ESD Rated/ Avalanche Rated / Logic Level N-Channel Enhancement-Mode Power MOSFETs

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	RF1S30N06LESM
Manufacturer	Fairchild Semiconductor
File Size	150.85 KB
Description	30A 60V ESD Rated/ Avalanche Rated / Logic Level N-Channel Enhancement-Mode Power MOSFETs
Datasheet	RF1S30N06LESM Datasheet
Additional preview pages of the RF1S30N06LESM datasheet.

Product details

Description

The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.

Features

30A, 60V.
rDS(ON) = 0.047Ω.
2kV ESD Protected.
Temperature Compensating PSPICE Model.
Peak Current vs Pulse Width Curve.
UIS Rating Curve DRAIN (FLANGE) JEDEC TO-262AA.

📁 Similar Datasheet

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Other Datasheets by Fairchild Semiconductor

RF1S30N06LE - 30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs
RF1S30P06SM - P-Channel Power MOSFET
RF1S22N10SM - 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs
RF1S25N06 - 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs
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RF1S40N10 - 40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs

Published: Apr 16, 2005 |