| Part Number | RF1S30N06LESM Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gi.
* 30A, 60V * rDS(ON) = 0.047Ω * 2kV ESD Protected * Temperature Compensating PSPICE Model * Peak Current vs Pulse Width Curve * UIS Rating Curve DRAIN (FLANGE) JEDEC TO-262AA Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET proce. |
RF1S30N06LESM Datasheet and Specifications PDF
The RF1S30N06LESM is a 30A 60V ESD Rated/ Avalanche Rated / Logic Level N-Channel Enhancement-Mode Power MOSFETs.
Key Specifications
| Max Operating Temp | 175 °C |
|---|
| Part Number | RF1S30N06LESM Datasheet |
|---|---|
| Description | 30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs |
| Manufacturer | Intersil |
| Overview |
RFP30N06LE, RF1S30N06LESM
Data Sheet April 1999 File Number
3629.2
30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using the MegaFET.
* 30A, 60V * rDS(ON) = 0.047Ω * 2kV ESD Protected * Temperature Compensating PSPICE™ Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFP3 0N06L E, RF1S3 0N06L ESM) /Subject (30A, 60V. |
| Part Number | RF1S30N06LESM Datasheet |
|---|---|
| Description | N-Channel Enhancement-Mode Power MOSFETs |
| Manufacturer | Harris |
| Overview |
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gi.
* 30A, 60V * rDS(ON) = 0.047Ω * 2kV ESD Protected * Temperature Compensating PSPICE Model * Peak Current vs Pulse Width Curve * UIS Rating Curve Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feat. |