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Hewlett-Packard
Hewlett-Packard

MSA-0785 Datasheet Preview

MSA-0785 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

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MSA-0785 pdf
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0785
Features
• Cascadable 50 Gain Block
• Low Operating Voltage:
4.0 V Typical Vd
• 3 dB Bandwidth:
DC to 2.0 GHz
• 12.5 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
Description
The MSA-0785 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
designed for use as a general
purpose 50 gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
85 Plastic Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 5 V
C block
IN
4
1 MSA
2
3
RFC (Optional)
C block
Vd = 4.0 V
OUT
5965-9593E
6-402



Hewlett-Packard
Hewlett-Packard

MSA-0785 Datasheet Preview

MSA-0785 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

No Preview Available !

MSA-0785 pdf
MSA-0785 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
60 mA
Power Dissipation[2,3]
275 mW
RF Input Power
+13 dBm
Junction Temperature
150°C
Storage Temperature
–65 to 150°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 9.1 mW/°C for TC > 120°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Thermal Resistance[2,4]:
θjc = 110°C/W
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 22 mA, ZO = 50
GP Power Gain (|S21| 2)
f = 0.1 GHz
f = 1.0 GHz
GP Gain Flatness
f = 0.1 to 1.3 GHz
f3 dB
3 dB Bandwidth
VSWR
Input VSWR
Output VSWR
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
NF 50 Noise Figure
f = 1.0 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 1.0 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
f = 1.0 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB
10.5
dB
GHz
dB
dBm
dBm
psec
V
mV/°C
3.2
Typ. Max.
13.5
12.5
± 0.7
2.0
1.4:1
1.5:1
5.0
5.5
19.0
140
4.0
–7.0
4.8
Note:
1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current
is on the following page.
6-403


Part Number MSA-0785
Description Cascadable Silicon Bipolar MMIC Amplifier
Maker Hewlett-Packard
Total Page 4 Pages
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