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Hewlett-Packard
Hewlett-Packard

MSA-0836 Datasheet Preview

MSA-0836 Datasheet

(MSA-0835 / MSA-0836) Cascadable Silicon Bipolar MMIC Amplifier

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MSA-0836 pdf
Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0835, -0836
Features
• Usable Gain to 6.0␣ GHz
• High Gain:
32.5 dB Typical at 0.1␣ GHz
23.0 dB Typical at 1.0␣ GHz
• Low Noise Figure:
3.0␣ dB Typical at 1.0␣ GHz
• Cost Effective Ceramic
Microstrip Package
Description
The MSA-0835 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50 gain block above
0.5␣ GHz and can be used as a high
gain transistor below this fre-
quency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commercial
and industrial applications.
35 micro-X Package[1]
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Note:
1. Short leaded 36 package available
upon request.
Available in cut lead version
(package␣ 36) as MSA-0836.
Typical Biasing Configuration
R bias
VCC > 10 V
C block
IN
4
3
1 MSA
2
RFC (Optional)
C block
Vd = 7.8 V
OUT
5965-9596E
6-414



Hewlett-Packard
Hewlett-Packard

MSA-0836 Datasheet Preview

MSA-0836 Datasheet

(MSA-0835 / MSA-0836) Cascadable Silicon Bipolar MMIC Amplifier

No Preview Available !

MSA-0836 pdf
MSA-0835, -0836 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
80 mA
Power Dissipation[2,3]
750 mW
RF Input Power
+13 dBm
Junction Temperature
200°C
Storage Temperature[4]
–65°C to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 5.7 mW/°C for TC > 69°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Thermal Resistance[2,5]:
θjc = 175°C/W
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 36 mA, ZO = 50
GP Power Gain (|S21| 2)
f = 0.1 GHz
f = 1.0 GHz
f = 4.0 GHz
VSWR
Input VSWR
Output VSWR
f = 1.0 to 3.0 GHz
f = 1.0 to 3.0 GHz
NF 50 Noise Figure
f = 1.0 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 1.0 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
f = 1.0 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB
22.0
dB
dBm
dBm
psec
V
mV/°C
7.0
Typ. Max.
32.5
23.0
10.5
2.0:1
1.5:1
3.0
12.5
27.0
125
7.8
–17.0
25.0
8.4
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0835
10 Strip
MSA-0836-BLK
100 Antistatic Bag
MSA-0836-TR1
1000
7" Reel
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-415


Part Number MSA-0836
Description (MSA-0835 / MSA-0836) Cascadable Silicon Bipolar MMIC Amplifier
Maker Hewlett-Packard
Total Page 4 Pages
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