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MSA-0885 - Cascadable Silicon Bipolar MMIC Amplifier

Download the MSA-0885 datasheet PDF. This datasheet also covers the MSA-0885_Hewlett variant, as both devices belong to the same cascadable silicon bipolar mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

Description

The MSA-0885 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package.

Features

  • Usable Gain to 6.0␣ GHz.
  • High Gain: 32.5 dB Typical at 0.1␣ GHz 22.5 dB Typical at 1.0␣ GHz.
  • Low Noise Figure: 3.3␣ dB Typical at 1.0␣ GHz.
  • Low Cost Plastic Package purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSA-0885_Hewlett-Packard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MSA-0885
Manufacturer Hewlett-Packard
File Size 53.07 KB
Description Cascadable Silicon Bipolar MMIC Amplifier
Datasheet download datasheet MSA-0885 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0885 Features • Usable Gain to 6.0␣ GHz • High Gain: 32.5 dB Typical at 0.1␣ GHz 22.5 dB Typical at 1.0␣ GHz • Low Noise Figure: 3.3␣ dB Typical at 1.0␣ GHz • Low Cost Plastic Package purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
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