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MSA1104 - Cascadable Silicon Bipolar MMIC Amplifier

Download the MSA1104 datasheet PDF. This datasheet also covers the MSA-1104_Hewlett variant, as both devices belong to the same cascadable silicon bipolar mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

Description

The MSA-1104 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost Typical Biasing Configuration R bias VCC > 8 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.5 V 2 2 MSA-1104 Absolute Maximum Ratings Parameter Device Current Power

Features

  • High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block.
  • 3 dB Bandwidth: 50 MHz to 1.3 GHz.
  • 17.5 dBm Typical P1 dB at 0.5 GHz.
  • 12 dB Typical 50 Ω Gain at 0.5 GHz.
  • 3.6 dB Typical Noise Figure at 0.5 GHz.
  • Low Cost Plastic Package plastic package. This MMIC is designed for high dynamic range in either 50 or 75 Ω systems by combining low noise figure with high IP3. Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSA-1104_Hewlett-Packard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MSA1104
Manufacturer Hewlett-Packard
File Size 44.00 KB
Description Cascadable Silicon Bipolar MMIC Amplifier
Datasheet download datasheet MSA1104 Datasheet

Full PDF Text Transcription

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Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1104 Features • High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block • 3 dB Bandwidth: 50 MHz to 1.3 GHz • 17.5 dBm Typical P1 dB at 0.5 GHz • 12 dB Typical 50 Ω Gain at 0.5 GHz • 3.6 dB Typical Noise Figure at 0.5 GHz • Low Cost Plastic Package plastic package. This MMIC is designed for high dynamic range in either 50 or 75 Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in commercial and industrial systems. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
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