HWC27NC Key Features
- Low Cost GaAs Power FET
- Class A or Class AB Operation
- 11 dB Typical Gain at 4 GHz
- 5V to 10V Operation
- Part: HWC27NC
- Manufacturer: Hexawave
- Size: 80.39 KB
Related Hexawave Datasheets
| Part Number | Description |
|---|---|
| HWC34NC | C-Band Power FET Non-Via Hole Chip |
HWC27NC Description
The HWC27NC is a medium power GaAs FET designed for various L-band & S-band applications. 100 ± 5 Chip size ± 50 Bond Pads 1-2 (Gate): 60 x 60 60 x 60 Electrical Specifications (TA=25°C) f = 4 GHz for all RF Tests Symbol IDSS Parameters & Conditions Saturated Current at VDS=3V, VGS=0V Units mA Min.