HWC34NC Overview
The HWC34NC is a power GaAs FET designed for various L-band & S-band applications. 100 ±5 Chip size ±50 Bond Pads 1-4 (Gate): 100 x 100 100 x 100 100 x 100 Electrical Specifications (TA=25°C) f = 4 GHz for all RF Tests Symbol Parameters & Conditions Units Min.
HWC34NC Key Features
- Low Cost GaAs Power FET
- Class A or Class AB Operation
- 8.5 dB Typical Gain at 4 GHz
- 5V to 10V Operation