HWC34NC Key Features
- Low Cost GaAs Power FET
- Class A or Class AB Operation
- 8.5 dB Typical Gain at 4 GHz
- 5V to 10V Operation
- Part: HWC34NC
- Manufacturer: Hexawave
- Size: 74.28 KB
Related Hexawave Datasheets
| Part Number | Description |
|---|---|
| HWC27NC | C-Band Power FET Non-Via Hole Chip |
HWC34NC Description
The HWC34NC is a power GaAs FET designed for various L-band & S-band applications. 100 ±5 Chip size ±50 Bond Pads 1-4 (Gate): 100 x 100 100 x 100 100 x 100 Electrical Specifications (TA=25°C) f = 4 GHz for all RF Tests Symbol Parameters & Conditions Units Min.