HWC27NC Datasheet C-Band Power FET Non-Via Hole Chip

Manufacturer: Hexawave

HWC27NC c-band power fet non-via hole chip by Hexawave - Datasheet Preview

Datasheet Details

Part number	HWC27NC
Manufacturer	Hexawave
File Size	80.39 KB
Description	C-Band Power FET Non-Via Hole Chip
Datasheet	HWC27NC Datasheet

General Description

The HWC27NC is a medium power GaAs FET designed for various L-band & S-band applications.

Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT* Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation * mounted on an infinite heat sink +15V -5V IDSS 2mA 175°C -65 to +175°C 3.5W HWC27NC C-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Outline Dimensions 650 Source 435 1 3 215 2 4 Source 0.0 0.0 58.5 344.5 400 Unit: µm Thickness: 100 ± 5 Chip size ± 50 Bond Pads 1-2 (Gate): Bond Pads 3-4 (Drain): 60 x 60 60 x 60 Electrical Specifications (TA=25°C) f = 4 GHz for all RF Tests Symbol IDSS Parameters & Conditions Saturated Current at VDS=3V, VGS=0V Units mA Min.

300 VP Pinch-off Voltage at VDS=3V, ID=20mA V -3.5 gm Transconductance at VDS=3V, ID=200mA mS - P1dB G1dB PAE Power Output at Test Points VDS=10V, ID=0.5 IDSS Gain at 1dB Compression Point VDS=10V, ID=0.5 IDSS Power-Added Efficiency (POUT = P1dB) VDS=10V, ID=0.5 IDSS dBm dB % 27 9 30 Typ.

Key Features

Low Cost GaAs Power FET.
Class A or Class AB Operation.
11 dB Typical Gain at 4 GHz.
5V to 10V Operation.

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HWC34NC	C-Band Power FET Non-Via Hole Chip