Datasheet4U Logo Datasheet4U.com

HWL27YRA - L-Band GaAs Power FET

📥 Download Datasheet

Preview of HWL27YRA PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number HWL27YRA
Manufacturer Hexawave
File Size 88.08 KB
Description L-Band GaAs Power FET
Datasheet download datasheet HWL27YRA-Hexawave.pdf

HWL27YRA Product details

Description

The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation mounted on an infinite heat sink +15V -5V IDSS 2mA 175°C -65 to +175°C 3.5W HWL27YRA L-Band GaAs Power FET Autumn 2002 V1 Outline Dimensions RA Package (Cer

Features

📁 HWL27YRA Similar Datasheet

  • HWL26YC - L-Band Power FET Via Hole Chip (ETC)
  • HWL30NC - L-Band Power FET Non-Via Hole (Aimtron Technology)
  • HWL30NPA - L-Band GaAs Power FET (ETC)
  • HWL34YRA - L-Band GaAs Power FET (ETC)
  • HWL36YRA - L-Band GaAs Power FET (ETC)
Other Datasheets by Hexawave
Published: |