HWL23NPB - L-Band GaAS Power FET

General Description

The HWL23NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications.

It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.

Key Features

Plastic Packaged GaAs Power FET.
Suitable for Commercial Wireless.

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HWL23NPB l-band gaas power fet by Hexawave - Datasheet Preview

Datasheet Details

Part number	HWL23NPB
Manufacturer	Hexawave
File Size	105.02 KB
Description	L-Band GaAS Power FET
Datasheet	HWL23NPB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V Operation Description The HWL23NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications. HWL23NPB L-Band GaAS Power FET Autumn 2002 V1 Outline Dimensions 1 23 Pin 1: Source Pin 2: Gate Pin 3: Drain Absolute Maximum Ratings VDS Drain to Source Voltage +7V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 1mA TCH Channel Temperature 150°C TSTG Storage Temperature -65 to +150°C PT Power Dissipation 0.