Description
The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.
Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation
mounted on an infinite heat sink
+15V -5V IDSS 2mA 175°C -65 to +175°C 3.5W
HWL27YRA
L-Band GaAs Power FET
Autumn 2002 V1
Outline Dimensions
RA Package (Cer
Features
- Low Cost GaAs Power FET.
- Class A or Class AB Operation.
- Greater than 17 dB Gain.
- 5V to 10V Operation.
HWL27YRA Datasheet
