HWL27YRA - L-Band GaAs Power FET

General Description

The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.

It is presently offered in low cost ceramic package.

Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Sto

Key Features

Low Cost GaAs Power FET.
Class A or Class AB Operation.
Greater than 17 dB Gain.
5V to 10V Operation.

📥 Download Datasheet

HWL27YRA l-band gaas power fet by Hexawave - Datasheet Preview

Datasheet Details

Part number	HWL27YRA
Manufacturer	Hexawave
File Size	88.08 KB
Description	L-Band GaAs Power FET
Datasheet	HWL27YRA Datasheet

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Other Datasheets by Hexawave

Part Number	Description
HWL23NPB	L-Band GaAS Power FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 17 dB Gain • 5V to 10V Operation Description The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT* Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation * mounted on an infinite heat sink +15V -5V IDSS 2mA 175°C -65 to +175°C 3.