Datasheet4U Logo Datasheet4U.com

HWL27YRA - L-Band GaAs Power FET

Datasheet Summary

Description

The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.

It is presently offered in low cost ceramic package.

Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Sto

Features

  • Low Cost GaAs Power FET.
  • Class A or Class AB Operation.
  • Greater than 17 dB Gain.
  • 5V to 10V Operation.

📥 Download Datasheet

Datasheet preview – HWL27YRA

Datasheet Details

Part number HWL27YRA
Manufacturer Hexawave
File Size 88.08 KB
Description L-Band GaAs Power FET
Datasheet download datasheet HWL27YRA Datasheet
Additional preview pages of the HWL27YRA datasheet.

📁 Similar Datasheet

  • HWL26YC - L-Band Power FET Via Hole Chip (ETC)
  • HWL30NC - L-Band Power FET Non-Via Hole (Aimtron Technology)
  • HWL30NPA - L-Band GaAs Power FET (ETC)
  • HWL34YRA - L-Band GaAs Power FET (ETC)
  • HWL36YRA - L-Band GaAs Power FET (ETC)
Other Datasheets by Hexawave

Full PDF Text Transcription

Click to expand full text
Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 17 dB Gain • 5V to 10V Operation Description The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT* Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation * mounted on an infinite heat sink +15V -5V IDSS 2mA 175°C -65 to +175°C 3.
Published: |