H2N4403 transistor equivalent, pnp epitaxial planar transistor.
* Complementary to H2N4401
* High Power Dissipation: 625mW at 25°C
* High DC Current Gain: 100-300 at 150mA
* High Breakdown Voltage: 40V Min.
TO-92
Abs.
Features
* Complementary to H2N4401
* High Power Dissipation: 625mW at 25°C
* High DC Current Gain: 100-30.
The H2N4403 is designed for general purpose switching and amplifier applications.
Features
* Complementary to H2N4401
* High Power Dissipation: 625mW at 25°C
* High DC Current Gain: 100-300 at 150mA
* High Breakdown Voltage: 40V Min..
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