H4435S Datasheet P-channel Enhancement-mode MOSFET

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200101) Issued Date : 2008.01.12 Revised Date :2009.02.06 Page No. : 1/5 H4435S P-Channel Enhancement-Mode MOSFET (-30V, -9.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	H4435S
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	170.63 KB
Description	P-Channel Enhancement-Mode MOSFET
Datasheet	H4435S H4435S_Hi Datasheet (PDF)

Key Features

RDS(on)=20mΩ@VGS=-10V, ID=-9.1A.
RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A.
Advanced trench process technology.
High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed).
1 o Parameter Ratings -30 ±20 -9.

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