H4435S Description
HI-SINCERITY MICROELECTRONICS CORP. 2008.01.12 Revised Date :2009.02.06 Page No. 1/5 H4435S P-Channel Enhancement-Mode MOSFET (-30V, -9.1A) 8-Lead Plastic SO-8 Package Code:.
H4435S Key Features
- RDS(on)=20mΩ@VGS=-10V, ID=-9.1A
- RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A
- Advanced trench process technology
- High Density Cell Design for Ultra Low On-Resistance