H4435S Overview
Key Features
- RDS(on)=20mΩ@VGS=-10V, ID=-9.1A
- RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A
- Advanced trench process technology
- High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain
