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H50N03E, H50N03E_Hi - N-Channel MOSFET

Hi-Sincerity Mocroelectronics

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H50N03E Datasheet Preview — This datasheet PDF includes multiple part numbers: H50N03E, H50N03E_Hi. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	H50N03E, H50N03E_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	82.71 KB
Description	N-Channel MOSFET
Datasheet	H50N03E_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: H50N03E, H50N03E_Hi. Please refer to the document for exact specifications by model.

H50N03E Product details

Features

RDS(on)=11mΩ@VGS=10V, ID=30A.
RDS(on)=18mΩ@VGS=4.5V, ID=30A.
Advanced trench process technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for DC/DC Converters and Motor Drivers.
Fully Characterized Avalanche Voltage and Current.
Improved Shoot-Through FOM 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source D G S Internal Schematic Diagram Maximum Ratings & Th.

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Published: Aug 30, 2011 |