H50N03E Description
..net HI-SINCERITY MICROELECTRONICS CORP. 2005.12.01 Revised Date : 1/5 H50N03E N-Channel Enhancement-Mode MOSFET (25V, 50A) H50N03E Pin Assignment Tab.
H50N03E Key Features
- RDS(on)=11mΩ@VGS=10V, ID=30A
- RDS(on)=18mΩ@VGS=4.5V, ID=30A
- Advanced trench process technology
- High Density Cell Design for Ultra Low On-Resistance
- Specially Designed for DC/DC Converters and Motor Drivers
- Fully Characterized Avalanche Voltage and Current
- Improved Shoot-Through FOM
- 1: Maximum DC current limited by the package. -2: 1-in2 2oz Cu PCB board
- 1.6 1 6
- V mΩ V uA nA Ω S