H50N03J - N-Channel MOSFET

This page provides the datasheet information for the H50N03J, a member of the H50N03J_Hi N-Channel MOSFET family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	H50N03J
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	92.38 KB
Description	N-Channel MOSFET
Datasheet	H50N03J Datasheet
Additional preview pages of the H50N03J datasheet.

RDS(on)=6mΩ@VGS=10V, ID=30A.
RDS(on)=9mΩ@VGS=4.5V, ID=30A.
Advanced trench process technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for DC/DC Converters and Motor Drivers.
Fully Characterized Avalanche Voltage and Current.
Improved Shoot-Through FOM D Internal Schematic Diagram G S Maximum Ratings & Thermal Characteristics (TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-So.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Aug 30, 2011 |