H50N03E - N-Channel MOSFET

This page provides the datasheet information for the H50N03E, a member of the H50N03E_Hi N-Channel MOSFET family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	H50N03E
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	82.71 KB
Description	N-Channel MOSFET
Datasheet	H50N03E Datasheet
Additional preview pages of the H50N03E datasheet.

RDS(on)=11mΩ@VGS=10V, ID=30A.
RDS(on)=18mΩ@VGS=4.5V, ID=30A.
Advanced trench process technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for DC/DC Converters and Motor Drivers.
Fully Characterized Avalanche Voltage and Current.
Improved Shoot-Through FOM 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source D G S Internal Schematic Diagram Maximum Ratings & Th.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Aug 30, 2011 |