H50N03E Datasheet | Hi-Sincerity Mocroelectronics

..net HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200519 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 N-Channel Enhancement-Mode MOSFET (25V, 50A) H50N03E Pin Assignment Tab Features - RDS(on)=11mΩ@VGS=10V, ID=30A - RDS(on)=18mΩ@VGS=4.5V, ID=30A - Advanced trench process technology - High Density Cell Design for Ultra Low On-Resistance - Specially Designed for DC/DC Converters and Motor Drivers - Fully Characterized Avalanche Voltage and Current - Improved Shoot-Through FOM 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Internal Schematic Diagram Maximum Ratings & Thermal Characteristics (TA=25o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current - 1 Maximum Power Dissipation @ TC=25o C Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse ID=35A, VDD=20V, L=0.14m H Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance(PCB mounted)- 2 - 1: Maximum DC current limited by the package. - 2: 1-in2 2oz Cu PCB board Symbol VDS VGS ID IDM PD TJ,Tstg EAS RθJC RθJA Value 25 ±20 50 200 70 -55 to 150 300 2.1 55 Units V V A A W o C m J C/W C/W Switching Test Circuit Switching Waveforms ton td(on) toff tr td(off) 90% tf 90...