H50N03E Datasheet N-channel MOSFET

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: ..net HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200519 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	H50N03E
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	82.71 KB
Description	N-Channel MOSFET
Datasheet	H50N03E H50N03E_Hi Datasheet (PDF)

RDS(on)=11mΩ@VGS=10V, ID=30A.
RDS(on)=18mΩ@VGS=4.5V, ID=30A.
Advanced trench process technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for DC/DC Converters and Motor Drivers.
Fully Characterized Avalanche Voltage and Current.
Improved Shoot-Through FOM 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source D G S Internal Schematic Diagram Maximum Ratings & Th.

Part Number	Description
H50N03J	N-Channel MOSFET
H50N03U	N-Channel MOSFET