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H50N03E - N-Channel MOSFET

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Hi-Sincerity Mocroelectronics

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H50N03E N-Channel MOSFET by Hi-Sincerity Mocroelectronics - Datasheet Preview — Datasheet preview – H50N03E

Datasheet Details

Part number	H50N03E
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	82.71 KB
Description	N-Channel MOSFET
Datasheet	H50N03E Datasheet
Note	This datasheet PDF includes multiple part numbers: H50N03E, H50N03E_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the H50N03E datasheet.

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Features

RDS(on)=11mΩ@VGS=10V, ID=30A.
RDS(on)=18mΩ@VGS=4.5V, ID=30A.
Advanced trench process technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for DC/DC Converters and Motor Drivers.
Fully Characterized Avalanche Voltage and Current.
Improved Shoot-Through FOM 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source D G S Internal Schematic Diagram Maximum Ratings & Th.

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Other Datasheets by Hi-Sincerity Mocroelectronics

H50N03J - N-Channel MOSFET
H50N03U - N-Channel MOSFET

Published: Aug 30, 2011 |