H50N03J Description
..net HI-SINCERITY MICROELECTRONICS CORP. 2005.01.01 Revised Date.
H50N03J Key Features
- RDS(on)=6mΩ@VGS=10V, ID=30A
- RDS(on)=9mΩ@VGS=4.5V, ID=30A
- Advanced trench process technology
- High Density Cell Design for Ultra Low On-Resistance
- Specially Designed for DC/DC Converters and Motor Drivers
- Fully Characterized Avalanche Voltage and Current
- Improved Shoot-Through FOM
- 1: Maximum DC current limited by the package. -2: 1-in2 2oz Cu PCB board
- 7.5 4.5 1.9 3 50
- V mΩ V uA nA Ω S