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H9926CS - Dual N-Channel Enhancement-Mode MOSFET

Download the H9926CS datasheet PDF. This datasheet also covers the H9926CS_Hi variant, as both devices belong to the same dual n-channel enhancement-mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process.

Key Features

  • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A.
  • High Density Cell Design for Ultra Low On-Resistance.
  • High Power and Current Handing Capability.
  • Fully Characterized Avalanche Voltage and Current.
  • Ideal for Li ion Battery Pack.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H9926CS_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H9926CS
Manufacturer Hi-Sincerity Mocroelectronics
File Size 77.48 KB
Description Dual N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet H9926CS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
H9926CTS Dual N-Channel Enhancement-Mode MOSFET
H9926S Dual N-Channel Enhancement-Mode MOSFET
H9926TS Dual N-Channel Enhancement-Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200508 Issued Date : 2005.08.01 Revised Date : 2005.10.06 Page No. : 1/4 H9926S / H9926CS Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1 2 3 8 • 7 6 5 8-Lead Plastic SO-8 Package Code: S 4 Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a www.DataSheet4U.com wide range of gate drive voltage (2.5V-10V) H9926S Symbol & Pin Assignment 5 6 7 8 Q2 Q1 4 3 2 1 Pin 1: Source 2 Pin 2: Gate 2 Pin 3: Source 1 Pin 4: Gate 1 Pin 5 / 6: Drain 1 Pin 7 / 8: Drain 2 Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.