• Part: H9926TS
  • Description: Dual N-Channel Enhancement-Mode MOSFET
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 76.61 KB
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H9926TS Key Features

  • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
  • High Density Cell Design for Ultra Low On-Resistance
  • High Power and Current Handing Capability
  • Fully Characterized Avalanche Voltage and Current
  • Ideal for Li ion Battery Pack

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H9926S Dual N-Channel Enhancement-Mode MOSFET