Datasheet4U Logo Datasheet4U.com

H9926CS Datasheet

Dual N-channel Enhancement-mode MOSFET

Manufacturer: Hi-Sincerity Mocroelectronics

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number H9926CS
Manufacturer Hi-Sincerity Mocroelectronics
File Size 77.48 KB
Description Dual N-Channel Enhancement-Mode MOSFET
Datasheet H9926CS H9926CS_Hi Datasheet (PDF)

H9926CS Overview

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a.

H9926CS Key Features

  • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
  • High Density Cell Design for Ultra Low On-Resistance
  • High Power and Current Handing Capability
  • Fully Characterized Avalanche Voltage and Current
  • Ideal for Li ion Battery Pack

More Datasheets from Hi-Sincerity Mocroelectronics

Part Number Description
H9926CTS Dual N-Channel Enhancement-Mode MOSFET
H9926S Dual N-Channel Enhancement-Mode MOSFET
H9926TS Dual N-Channel Enhancement-Mode MOSFET

H9926CS Distributor