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H9926TS - Dual N-Channel Enhancement-Mode MOSFET

This page provides the datasheet information for the H9926TS, a member of the H9926CTS_Hi Dual N-Channel Enhancement-Mode MOSFET family.

Datasheet Summary

Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process.

Features

  • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A.
  • High Density Cell Design for Ultra Low On-Resistance.
  • High Power and Current Handing Capability.
  • Fully Characterized Avalanche Voltage and Current.
  • Ideal for Li ion Battery Pack.

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Datasheet preview – H9926TS

Datasheet Details

Part number H9926TS
Manufacturer Hi-Sincerity Mocroelectronics
File Size 76.61 KB
Description Dual N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet H9926TS Datasheet
Additional preview pages of the H9926TS datasheet.

📁 Similar Datasheet

Other Datasheets by Hi-Sincerity Mocroelectronics
  • H9926CS - Dual N-Channel Enhancement-Mode MOSFET
  • H9926CTS - Dual N-Channel Enhancement-Mode MOSFET
  • H9926S - Dual N-Channel Enhancement-Mode MOSFET

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200513 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 H9926TS / H9926CTS Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 8-Lead Plastic TSSOP-8L Package Code: TS H9926TS Symbol & Pin Assignment 8 7 6 5 Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a www.DataSheet4U.com wide range of gate drive voltage (2.5V-10V) Q2 Q1 1 2 3 4 Pin 1: Drain 1 Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain 2 Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.
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