Download the HI31C datasheet PDF. This datasheet also covers the HI31C_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
The HI31C is designed for use in general purpose amplifier and switching applications.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 1
| Part number | HI31C |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 65.40 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HI31C Datasheet
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Note: Below is a high-fidelity text extraction (approx. 800 characters) for HI31C. For precise diagrams, and layout, please refer to the original PDF.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9001 Issued Date : 1996.02.28 Revised Date : 2002.03.04 Page No. : 1/3 HI31C NPN EPITAXIAL PLANAR TRANSISTOR Description...
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| Hughes Microelectronics | HI3104A | CMOS EEPROM | Hughes Microelectronics |
 |
HI3197 | 125 MSPS D/A Converter | Intersil Corporation |
| Part Number | Description |
|---|---|
| HI32C | PNP EPITAXIAL PLANAR TRANSISTOR |
| HI3669 | NPN EPITAXIAL PLANAR TRANSISTOR |
