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HI31C, HI31C_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

The HI31C by Hi-Sincerity Mocroelectronics is a NPN EPITAXIAL PLANAR TRANSISTOR. Below is the official datasheet preview.

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Official preview page of the HI31C NPN EPITAXIAL PLANAR TRANSISTOR datasheet (Hi-Sincerity Mocroelectronics).

Datasheet Details

Part number HI31C, HI31C_Hi
Manufacturer Hi-Sincerity Mocroelectronics
File Size 65.40 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HI31C_Hi-SincerityMocroelectronics.pdf
Note This datasheet PDF includes multiple part numbers: HI31C, HI31C_Hi.
Please refer to the document for exact specifications by model.
Additional preview pages of the HI31C datasheet.

HI31C Product details

Description

The HI31C is designed for use in general purpose amplifier and switching applications. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 15 W Maximum Voltages and Currents BVCBO Collector to Base Voltage 100 V BVCEO Collector to Emitter Voltage 100 V BVEBO Emitter to Base Voltage 5 V IC Collector Current 3 A www.DataSheet4U.c

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