HI31C Datasheet - Hi-Sincerity Mocroelectronics

NPN EPITAXIAL PLANAR TRANSISTOR

HI31C General Description

The HI31C is designed for use in general purpose amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) TO-251 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C * Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 1.

HI31C Datasheet (65.40 KB)

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HI31C

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Hi-Sincerity Mocroelectronics

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65.40 KB

Description:

Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9001 Issued Date : 1996.02.28 Revised Date : 2002.03.04 Page No. : 1/3 HI31C NPN EPITAXIAL PLANAR .

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HI31C NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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HI31C General Description

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