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Hi-Sincerity Mocroelectronics

HIRF730F Datasheet Preview

HIRF730F Datasheet

N-CHANNEL POWER MOSFET

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200406
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 1/4
HIRF730 / HIRF730F
N-CHANNEL POWER MOSFET
Description
Third Generation HEXFETs from international Rectifier provide the
designer with the best combination of fast switching, ruggedized device
www.DataShdeeest4igUn.c,olmow on-resistance and cost-effectiveness.
Features
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance
Junction to Case Max.
RθJA
Thermal Resistance
Junction to Ambient Max.
Value
TO-220AB 1.71
TO-220FP
3.3
62
Units
°C/W
°C/W
HIRF730 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
123
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
123
HIRF730 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain to Current (Continuous)
IDM Drain to Current (Pulsed) (*1)
VGS Gate-to-Source Voltage (Continue)
Total Power Dissipation
TO-220AB
TO-220FP
PD Derate above 25°C
TO-220AB
TO-220FP
EAS Single Pulse Avalanche Energy (*2)
IAR Avalanche Current (*1)
EAR Repetitive Avalanche Energy (*1)
dv/dt Peak Diode Recovery (*3)
Tj Operating Temperature Range
Tstg Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: VDD=50V, starting Tj=25°C, L=16mH, RG=25, IAS=5.5A
*3: ISD5.5A, di/dt90A/us, VDDV(BR)DSS, TJ150°C
HIRF730, HIRF730F
Value
400
5.5
22
±20
74
38
0.58
0.3
290
5.5
7.4
4
-55 to 150
-55 to 150
300
Units
V
A
A
V
W
W/°C
mJ
A
mJ
V/ns
°C
°C
°C
HSMC Product Specification




Hi-Sincerity Mocroelectronics

HIRF730F Datasheet Preview

HIRF730F Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200406
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 2/4
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS
IDSS
IGSSF
www.DataSheet4UIG.ScSoRm
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=400V, VGS=0V)
Drain-Source Leakage Current (VDS=320V, VGS=0V, Tj=125°C)
Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=3.3A)(*4)
Forward Transconductance (VDS=50V, ID=3.3A)(*4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V, VGS=0V, f=1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
(VDD=200V, ID=3.5A, RG=12,
RD=57)(*4)
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS=320V, ID=3.5A, VGS=10V)
(*4)
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
LS
Internal Source Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*4: Pulse Test: Pulse Width300us, Duty Cycle2%
Source-Drain Diode
Symbol
Characteristic
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
trr Reverse Recovery Time
VSD Diode Forward Voltage
**: Negligible, Dominated by circuit inductance
IF=3.5A, di/dt=100A/us, Tj=25°C
(*4)
IS=5.5A, VGS=0V, Tj=25°C (*4)
Min. Typ. Max. Unit
400 - - V
- - 1 uA
50 uA
- - 100 nA
- - -100 nA
2 - 4V
- - 1
2.9 - - S
- 700 -
- 170 - pF
- 64 -
- 10 -
- 15 -
ns
- 38 -
- 14 -
- - 38
- - 5.7 nC
- - 22
- 4.5 - nH
- 7.5 - nH
Min. Typ. Max. Units
- 1.8 2.2 uC
- ** -
- 270 530 ns
- - 1.6 V
HIRF730, HIRF730F
HSMC Product Specification


Part Number HIRF730F
Description N-CHANNEL POWER MOSFET
Maker Hi-Sincerity Mocroelectronics
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HIRF730F Datasheet PDF





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