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Hi-Sincerity Mocroelectronics

HIRF740 Datasheet Preview

HIRF740 Datasheet

N-Channel Power MOSFET

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200512
Issued Date : 2005.09.01
Revised Date : 2005.09.22
Page No. : 1/4
HIRF740 / HIRF740F
N-Channel Power MOSFET (400V, 10A)
Description
This N-Channel MOSFETs provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance and cost-
www.DataSheeffeet4cUti.vceomness.
Features
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance
Junction to Case Max.
RθJA
Thermal Resistance
Junction to Ambient Max.
Value
TO-220AB 1.71
TO-220FP
3.3
62
Units
°C/W
°C/W
HIRF740 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
123
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
123
HIRF740 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
Drain-Source Voltage
Drain to Current (Continuous)(VGS@10V, TC=25oC)
Drain to Current (Continuous)(VGS@10V, TC=100oC)
Drain to Current (Pulsed)*1
Gate-to-Source Voltage (Continue)
Total Power Dissipation
TO-220AB
TO-220FP
PD Derate above 25°C
TO-220AB
TO-220FP
EAS
IAR
EAR
dv/dt
TJ,Tstg
TL
Single Pulse Avalanche Energy*2
Avalanche Current*1
Repetitive Avalanche Energy*1
Peak Diode Recovery*3
Operating Junction and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1.6mm
from case for 10 seconds
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: VDD=50V, starting Tj=25°C, L=9.1mH, RG=25, IAS=10A
*3: ISD10A, di/dt120A/us, VDDV(BR)DSS, TJ150°C
HIRF740, HIRF740F
Value
400
10
6.3
40
±20
74
38
0.59
0.3
520
10
13
4
-55 to 150
300
Units
V
A
A
A
V
W
W/°C
mJ
A
mJ
V/ns
°C
°C
HSMC Product Specification




Hi-Sincerity Mocroelectronics

HIRF740 Datasheet Preview

HIRF740 Datasheet

N-Channel Power MOSFET

No Preview Available !

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200512
Issued Date : 2005.09.01
Revised Date : 2005.09.22
Page No. : 2/4
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient (Reference to 25oC, ID=1mA)
IDSS
Drain-Source Leakage Current (VDS=400V, VGS=0V)
Drain-Source Leakage Current (VDS=320V, VGS=0V, Tj=125°C)
www.DataSheet4UIG.cSoSFm
Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V)
IGSSR
Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V)
VGS(th)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=6A)*4
gFS Forward Transconductance (VDS=50V, ID=6A)*4
Ciss Input Capacitance
Coss Output Capacitance
VDS=25V, VGS=0V, f=1MHz
Crss Reverse Transfer Capacitance
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-off Delay Time
(VDD=200V, ID=10A, RG=9.1,
RD=20)*4
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
(VDS=320V, ID=10A, VGS=10V)*4
Qgd Gate-Drain Charge
LD
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
LS
Internal Source Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*4: Pulse Test: Pulse Width300us, Duty Cycle2%
Source-Drain Diode
Symbol
Characteristic
IS
Continuous Source Current (Body
Diode)
MOSFET symbol
showing the
ISM
Pulsed Source Current (Body
Diode)*1
integral reverse P- G
N junction diode
D
S
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VSD Diode Forward Voltage
ton Forward Turn-On Time
**: Negligible, Dominated by circuit inductance
IF=10A, di/dt=100A/us, TJ=25°C*4
IS=10A, VGS=0V, TJ=25°C (*4)
Min. Typ. Max. Unit
400 - - V
- 0.49 - V/oC
- - 25 uA
250 uA
- - 100 nA
- - -100 nA
2 - 4V
- - 0.55
5.8 - - S
- 1400 -
- 330 - pF
- 120 -
- 14 -
- 27 -
ns
- 50 -
- 24 -
- - 63
- - 9 nC
- - 32
- 4.5 - nH
- 7.5 - nH
Min. Typ. Max. Units
- - 10 A
- - 40 A
- 370 790 ns
- 3.8 8.2 uC
- - 2V
- ** -
HIRF740, HIRF740F
HSMC Product Specification


Part Number HIRF740
Description N-Channel Power MOSFET
Maker Hi-Sincerity Mocroelectronics
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HIRF740 Datasheet PDF





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1 HIRF740 N-Channel Power MOSFET
Hi-Sincerity Mocroelectronics
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