The HSB649T by Hi-Sincerity Mocroelectronics is a SILICON PNP EPITAXIAL PLANAR TRANSISTOR. Below is the official datasheet preview.
| Part number | HSB649T, HSB649T-Hi |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 39.99 KB |
| Description | SILICON PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HSB649T-Hi-SincerityMocroelectronics.pdf
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| Note |
This datasheet PDF includes multiple part numbers: HSB649T, HSB649T-Hi. Please refer to the document for exact specifications by model. |
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Low frequency power amplifier. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation 1 W Total Power Dissipation (TC=25°C) 20 W Maximum Voltages and Currents BVCBO Collector to Base Voltage -180 V BVCEO Collector to Emitter Voltage -160 V BVEBO Emitter to Base Voltage -5 V IC Collector Current (DC) -1.5 A IC Collector Current (Pu
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