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Hi-Sincerity Mocroelectronics

HSB649T Datasheet Preview

HSB649T Datasheet

SILICON PNP EPITAXIAL PLANAR TRANSISTOR

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HI-SINCERITY
MICROELECTRONICS CORP.
HSB649T
SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HT200103
Issued Date : 2001.12.01
Revised Date : 2005.12.02
Page No. : 1/4
Description
Low frequency power amplifier.
Absolute Maximum Ratings (TA=25°C)
TO-126
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation ....................................................................................................................................... 1 W
Total Power Dissipation (TC=25°C) .................................................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................................................... -180 V
BVCEO Collector to Emitter Voltage................................................................................................................... -160 V
BVEBO Emitter to Base Voltage............................................................................................................................. -5 V
IC Collector Current (DC) .................................................................................................................................. -1.5 A
IC Collector Current (Pulse).................................................................................................................................. -3 A
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case (Max.)..................................................................................... 6.25 °C/W
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min. Typ. Max.
-180
-
-
-160
-
-
-5 -
-
- - -10
- - -1
- - -1.5
100 - 200
30 -
-
- 140 -
- 27 -
Classification Of hFE1
Rank
Range
C
100-200
Unit
V
V
V
uA
V
V
MHz
pF
Test Conditions
IC=-1mA, IE=0
IC=-10mA, IB=0
IE=-1mA, IC=0
VCB=-160V, IE=0
IC=-500mA, IB=-50mA
IC=-150mA, VCE=-5V
IC=-150mA, VCE=-5V
IC=-500mA, VCE=-5V
IC=-150mA ,VCE=-5V
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSB649T
HSMC Product Specification




Hi-Sincerity Mocroelectronics

HSB649T Datasheet Preview

HSB649T Datasheet

SILICON PNP EPITAXIAL PLANAR TRANSISTOR

No Preview Available !

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HT200103
Issued Date : 2001.12.01
Revised Date : 2005.12.02
Page No. : 2/4
Current Gain & Collector Current
1000
10000
Saturation Voltage & Collector Current
125oC
75oC
100 25oC
hFE @ VCE=5V
1000
100
VCE(sat) @ IC=10IB
125oC
75oC
25oC
10
1
10 100 1000
Collector Current-IC (mA)
10000
10
1
10 100 1000
Collector Current-IC (mA)
10000
Saturation Voltage & Collector Current
1000
25oC
75oC
125oC
VBE(ON) @ VCE=5V
Capacitance & Reverse-Biased Voltage
100
Cob
10
100
1
10 100 1000
Collector Current-IC (mA)
10000
Safe Operating Area
10
PT=1ms
PT=100ms
1 PT=1s
1
0.1
1 10
Reverse Biased Voltage (V)
100
0.1
0.01
1
HSB649T
10 100
Forward Voltage-VCE (V)
1000
HSMC Product Specification


Part Number HSB649T
Description SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Maker Hi-Sincerity Mocroelectronics
Total Page 4 Pages
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