• Part: HSB649T
  • Description: SILICON PNP EPITAXIAL PLANAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 39.99 KB
Download HSB649T Datasheet PDF
Hi-Sincerity Mocroelectronics
HSB649T
Description Low frequency power amplifier. Absolute Maximum Ratings (TA=25°C) TO-126 - Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum - Maximum Power Dissipation Total Power Dissipation 1 W Total Power Dissipation (TC=25°C) 20 W - Maximum Voltages and Currents BVCBO Collector to Base Voltage -180 V BVCEO Collector to Emitter Voltage...