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HSB649T Datasheet - Hi-Sincerity Mocroelectronics

HSB649T SILICON PNP EPITAXIAL PLANAR TRANSISTOR

Low frequency power amplifier. Absolute Maximum Ratings (TA=25°C) TO-126 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissipation 1 W Total Power Dissipation (TC=25°C) 20 W * Maxi.

HSB649T Datasheet (39.99 KB)

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Datasheet Details

Part number:

HSB649T

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

39.99 KB

Description:

Silicon pnp epitaxial planar transistor.

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HSB649T SILICON PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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