HSB649A - SILICON PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HSB649A, a member of the HSB649A_Hi SILICON PNP EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	HSB649A
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	41.08 KB
Description	SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSB649A Datasheet
Additional preview pages of the HSB649A datasheet.

HSB649A Product details

Description

Low frequency power amplifier complementary pair with HSD669A.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation 1 W Total Power Dissipat

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Published: Mar 26, 2005 |