HSB1109 - PNP EPITAXIAL PLANAR TRANSISTOR

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HSB1109
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	41.78 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSB1109 Datasheet
Note	This datasheet PDF includes multiple part numbers: HSB1109, HSB1109_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the HSB1109 datasheet.

Low frequency high voltage amplifier.
Complementary pair with HSD1609 Absolute Maximum Ratings (TA=25°C) TO-126ML.
Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.25 W.
Maximum Voltages and Currents BVCBO Collector to Base Voltage.

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Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 26, 2005 |