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HSB1109 Datasheet PNP Epitaxial Planar Transistor

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: HI-SINCERITY MICROELECTRONICS CORP. HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2006.02.20 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number HSB1109
Manufacturer Hi-Sincerity Mocroelectronics
File Size 41.78 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet HSB1109 HSB1109_Hi Datasheet (PDF)

Key Features

  • Low frequency high voltage amplifier.
  • Complementary pair with HSD1609 Absolute Maximum Ratings (TA=25°C) TO-126ML.
  • Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.25 W.
  • Maximum Voltages and Currents BVCBO Collector to Base Voltage.

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