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HSB1109 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HSB1109 datasheet PDF. This datasheet also covers the HSB1109_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low frequency high voltage amplifier.
  • Complementary pair with HSD1609 Absolute Maximum Ratings (TA=25°C) TO-126ML.
  • Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.25 W.
  • Maximum Voltages and Currents BVCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSB1109_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSB1109
Manufacturer Hi-Sincerity Mocroelectronics
File Size 41.78 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSB1109 Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
HSB1109S PNP EPITAXIAL PLANAR TRANSISTOR
HSB1426 PNP EPITAXIAL PLANAR TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2006.02.20 Page No. : 1/4 Features • Low frequency high voltage amplifier • Complementary pair with HSD1609 Absolute Maximum Ratings (TA=25°C) TO-126ML • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ..............................................................................................................