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HSB564A - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HSB564A datasheet PDF. This datasheet also covers the HSB564A_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HSB564A is designed for general purpose low frequency power amplifier applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 8

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Note: The manufacturer provides a single datasheet file (HSB564A_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSB564A
Manufacturer Hi-Sincerity Mocroelectronics
File Size 46.12 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSB564A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HSB564A PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6519 Issued Date : 1993.01.15 Revised Date : 2005.02.15 Page No. : 1/4 Description The HSB564A is designed for general purpose low frequency power amplifier applications. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .........................................................................................................