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HSB1109S - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HSB1109S, a member of the HSB1109S_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HSB1109S is designed for low frequency and high voltage amplifier applications complementary pair with HSD1609S.

Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total P

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Datasheet Details

Part number HSB1109S
Manufacturer Hi-Sincerity Mocroelectronics
File Size 51.21 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSB1109S Datasheet
Additional preview pages of the HSB1109S datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HSB1109S PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6514 Issued Date : 1993.03.15 Revised Date : 2005.02.14 Page No. : 1/5 Description The HSB1109S is designed for low frequency and high voltage amplifier applications complementary pair with HSD1609S. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...........................................................................
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