HSB1109S - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HSB1109S, a member of the HSB1109S_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HSB1109S
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	51.21 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSB1109S Datasheet
Additional preview pages of the HSB1109S datasheet.

The HSB1109S is designed for low frequency and high voltage amplifier applications complementary pair with HSD1609S.

Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total P

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Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 26, 2005 |