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HSB562 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HSB562 datasheet PDF. This datasheet also covers the HSB562_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HSB562 is designed for general purpose low frequency power amplifier applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 90

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSB562_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSB562
Manufacturer Hi-Sincerity Mocroelectronics
File Size 50.75 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSB562 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HSB562 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6513 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Page No. : 1/5 Description The HSB562 is designed for general purpose low frequency power amplifier applications. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...........................................................................................................