HSB562 - PNP EPITAXIAL PLANAR TRANSISTOR

Product Overview

Hi-Sincerity Mocroelectronics

Datasheet Details

Part number	HSB562
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	50.75 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSB562 Datasheet
Note	This datasheet PDF includes multiple part numbers: HSB562, HSB562_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the HSB562 datasheet.

Product details

Description

The HSB562 is designed for general purpose low frequency power amplifier applications. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 900 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

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Published: Mar 26, 2005 |