Download the HSB649T datasheet PDF. This datasheet also covers the HSB649T-Hi variant, as both devices belong to the same silicon pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
Low frequency power amplifier.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation 1 W Total Power Dissipation (TC=25°C) 20 W Maxi
| Part number | HSB649T |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 39.99 KB |
| Description | SILICON PNP EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HSB649T Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| HSB-ARA62-SN15A | (HSB Series) Connectors | DDK ELECTRONICS |
| HSB-ARA62-T115A | (HSB Series) Connectors | DDK ELECTRONICS |
| HSB-ARA62-T215A | (HSB Series) Connectors | DDK ELECTRONICS |
| HSB-ARA62-T315A | (HSB Series) Connectors | DDK ELECTRONICS |
| HSB-ARD64-SN16C | (HSB Series) Connectors | DDK ELECTRONICS |
| Part Number | Description |
|---|---|
| HSB649A | SILICON PNP EPITAXIAL PLANAR TRANSISTOR |
| HSB1109 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HSB1109S | PNP EPITAXIAL PLANAR TRANSISTOR |
| HSB1426 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HSB562 | PNP EPITAXIAL PLANAR TRANSISTOR |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
