HSB649T - SILICON PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HSB649T, a member of the HSB649T-Hi SILICON PNP EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	HSB649T
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	39.99 KB
Description	SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSB649T Datasheet
Additional preview pages of the HSB649T datasheet.

HSB649T Product details

Description

Low frequency power amplifier.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation 1 W Total Power Dissipation (TC=25°C) 20 W Maxi

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Published: Mar 24, 2016 |