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2SJ321 Datasheet Silicon P Channel MOS FET

Manufacturer: Hitachi Semiconductor (now Renesas)

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2SJ321 silicon p channel mos fet by Hitachi Semiconductor (now Renesas) - Datasheet Preview

Datasheet Details

Part number	2SJ321
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	29.71 KB
Description	Silicon P Channel MOS FET
Download	2SJ321 Download (PDF)

Overview

2SJ321 Silicon P-Channel MOS FET Application High speed power.

Key Features

Low on-resistance.
High speed switching.
Low drive current.
4 V gate drive device can be driven from 5 V source.
Suitable for switching regulator, DC-DC converter.
Avalanche ratings Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S November 1996 2SJ321 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current.

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