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H5N5005PL
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1382 (Z) Target Specification 1st. Edition Mar. 2001 Features
• • • • • •
Low on-resistance: R DS(on) = 0.064 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VGS = 10 V, VDD = 250 V, ID = 30 A) Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A) Avalanche ratings Built-in fast recovery diode: trr = 220 ns typ
Outline
TO-3PL
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1. Gate 2. Drain (Flange) 3. Source
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H5N5005PL Datasheet
