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H5N5005PL Datasheet Silicon N-channel Mos Fet

Manufacturer: Renesas

Overview: H5N5005PL Silicon N Channel MOS FET High Speed Power Switching.

Key Features

  • Low on-resistance: RDS(on) = 0.070 Ω typ.
  • Low leakage current: IDSS = 10 µA max (at VDS = 500 V).
  • High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω).
  • Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A).
  • Avalanche ratings.
  • Built-in fast recovery diode: trr = 220 ns typ Outline.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Hitachi Logo H5N5005PL Silicon N-Channel MOSFET Hitachi

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