H5N5005PL Overview
H5N5005PL Silicon N Channel MOS FET High Speed Power Switching.
H5N5005PL Key Features
- Low on-resistance: RDS(on) = 0.070 Ω typ
- Low leakage current: IDSS = 10 µA max (at VDS = 500 V)
- High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω)
- Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A)
- Avalanche ratings
- Built-in fast recovery diode: trr = 220 ns typ
