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H5N5005PL - Silicon N-Channel MOS FET

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Renesas

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H5N5005PL Silicon N-Channel MOS FET by Renesas - Datasheet Preview — Datasheet preview – H5N5005PL

Datasheet Details

Part number	H5N5005PL
Manufacturer	Renesas
File Size	128.20 KB
Description	Silicon N-Channel MOS FET
Datasheet	H5N5005PL Datasheet
Additional preview pages of the H5N5005PL datasheet.

Product details

Features

Low on-resistance: RDS(on) = 0.070 Ω typ.
Low leakage current: IDSS = 10 µA max (at VDS = 500 V).
High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω).
Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A).
Avalanche ratings.
Built-in fast recovery diode: trr = 220 ns typ Outline.

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Published: May 1, 2016 |