H5N5005PL Datasheet | Renesas

Features - Low on-resistance: RDS(on) = 0.070 Ω typ. - Low leakage current: IDSS = 10 µA max (at VDS = 500 V) - High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω) - Low gate charge: Qg = 300 n C typ (at VDD = 400 V, VGS = 10 V, ID = 60 A) - Avalanche ratings - Built-in fast recovery diode: trr = 220 ns typ Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) REJ03G0419-0400 Rev.4.00 May 13, 2009 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 IAP Note3 Pch Note2 θch-c Tch Tstg 1. Gate 2. Drain (Flange) 3. Source Ratings 500 ±30 60 240 60 240 30 270 0.463 150 - 55 to +150 (Ta = 25°C) Unit V V A A A A A W °C/W °C °C REJ03G0419-0400 Rev.4.00 May 13, 2009 Page 1 of 6 Electrical Characteristics Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Note: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF...