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H5N5005PL - Silicon N-Channel MOSFET

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Hitachi

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H5N5005PL Silicon N-Channel MOSFET by Hitachi - Datasheet Preview — Datasheet preview – H5N5005PL

Datasheet Details

Part number	H5N5005PL
Manufacturer	Hitachi
File Size	52.13 KB
Description	Silicon N-Channel MOSFET
Datasheet	H5N5005PL Datasheet
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Features

Low on-resistance: R DS(on) = 0.064 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VGS = 10 V, VDD = 250 V, ID = 30 A) Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A) Avalanche ratings Built-in fast recovery diode: trr = 220 ns typ Outline TO-3PL w w . D w G t a D S S a 1 2 e h 3 t e U 4 . c m o 1. Gate 2. Drain (Flange) 3. Source w w w . D a.

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Published: Mar 13, 2006 |