Datasheet4U.com

H5N5005PL Datasheet Silicon N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: H5N5005PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1382 (Z) Target Specification 1st. Edition Mar.

H5N5005PL datasheet preview

Datasheet Details

Part number	H5N5005PL
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	52.13 KB
Description	Silicon N-Channel MOSFET
Datasheet	H5N5005PL_Hitachi.pdf

Key Features

Low on-resistance: R DS(on) = 0.064 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VGS = 10 V, VDD = 250 V, ID = 30 A) Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A) Avalanche ratings Built-in fast recovery diode: trr = 220 ns typ Outline TO-3PL w w . D w G t a D S S a 1 2 e h 3 t e U 4 . c m o 1. Gate 2. Drain (Flange) 3. Source w w w . D a.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	H5N5005PL	Silicon N-Channel MOS FET	Renesas

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number	Description
H5N5001FM	Silicon N-Channel MOSFET
H5N5004PL	Silicon N-Channel MOSFET
H5N5006FM	Silicon N-Channel MOSFET
H5N5006LD	(H5N5006xx) Silicon N-Channel MOSFET
H5N5006LM	(H5N5006xx) Silicon N-Channel MOSFET
H5N5006LS	(H5N5006xx) Silicon N-Channel MOSFET
H5N5007P	Silicon N-Channel MOSFET
H5N5015P	Silicon N-Channel MOSFET
H5N2509P	Silicon N-Channel MOSFET

H5N5005PL Distributor