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Hitachi Power Semiconductor Device Electronic Components Datasheet

1SS82 Datasheet

Silicon Epitaxial Planar Diode for High Voltage Switching

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1SS82
Silicon Epitaxial Planar Diode for High Voltage Switching
Features
High reverse voltage. (VR = 200V)
High reliability with glass seal.
Ordering Information
Type No.
1SS82
Cathode band
Verdure
Outline
2nd band
Light Blue
ADE-208-149A (Z)
Rev. 1
Jul. 1995
Package Code
DO-35
12
2nd band
Cathode band
1. Cathode
2. Anode


Hitachi Power Semiconductor Device Electronic Components Datasheet

1SS82 Datasheet

Silicon Epitaxial Planar Diode for High Voltage Switching

No Preview Available !

1SS82
Absolute Maximum Ratings*2 (Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak forward surge current
Average forward current
Power dissipation
VRM* 1
VR
I FM
I FSM * 2
IO
Pd
250
200
625
1
200
400
V
V
mA
A
mA
mW
Junction temperature
Tj 175 °C
Storage temperature
Tstg
–65 to +175
°C
Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic.
2. Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Forward voltage
Reverse current
Capacitance
VF
I R1
I R2
C
Reverse recovery time trr
— — 1.0 V
IF = 100mA
— — 0.2 µA VR = 200V
— — 100
VR = 250V
— 1.5 — pF VR = 0V, f = 1MHz
— — 100 ns IF = IR = 30mA, Irr = 3mA, RL = 100
2


Part Number 1SS82
Description Silicon Epitaxial Planar Diode for High Voltage Switching
Maker Hitachi Semiconductor
Total Page 6 Pages
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