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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SA743A Datasheet

Silicon PNP Transistor

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2SA743, 2SA743A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A
Outline
TO-126 MOD
123
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
PC
PC * 1
Tj
Tstg
Ratings
2SA743
–50
–50
–4
–1
0.75
8
150
–55 to +150
2SA743A
–80
–80
–4
–1
0.75
8
150
–55 to +150
Unit
V
V
V
A
W
°C
°C


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SA743A Datasheet

Silicon PNP Transistor

No Preview Available !

2SA743, 2SA743A
Electrical Characteristics (Ta = 25°C)
2SA743
2SA743A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–50 —
–80 —
—V
IC = –1 mA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–50 —
–80 —
—V
IC = –10 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
–4
–4
—V
IE = –1 mA, IC = 0
Collector cutoff current ICER
— — –20 — — — µA VCE = –50 V, RBE = 1
k
I CER
DC current tarnsfer ratio hFE*1
— — — — — –20
60 120 200 60 120 200
VCE = –80 V, RBE = 1
k
VCE = –4 V, IC = –50
mA
hFE 20 — — 20 — —
VCE = –4 V, IC = –1 A
(pulse)
Base to emitter voltage VBE
— –0.65 –1.0 — –0.65 1.0 V
VCE = –4 V, IC = –50
mA
Collector to emitter
saturation voltage
VCE(sat) — –0.75 –1.5 — –0.75 –1.5 V
IC = –1 A, IB = –0.1 A
Gain bandwidth product fT
— 120 — — 120 — MHz VCE = –4 V, IC = –30
mA
Note: 1. The 2SA743 and 2SA743A is grouped by hFE as follows.
B
60 to 120
C
100 to 200
2


Part Number 2SA743A
Description Silicon PNP Transistor
Maker Hitachi Semiconductor
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2SA743A Datasheet PDF






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