Datasheet Details
| Part number | 2SA743 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.06 KB |
| Description | PNP Transistor |
| Datasheet | 2SA743-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA743.
| Part number | 2SA743 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.06 KB |
| Description | PNP Transistor |
| Datasheet | 2SA743-INCHANGE.pdf |
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·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Complement to Type 2SC1212 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 0.75 W 8 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SA743 | Silicon PNP Transistor | Hitachi Semiconductor | |
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2SA743 | Silicon POwer Transistors | SavantIC |
| 2SA743A | Silicon PNP Transistor | Hitachi Semiconductor | |
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2SA743A | Silicon POwer Transistors | SavantIC |
| Part Number | Description |
|---|---|
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