Datasheet Summary
isc Silicon PNP Power Transistor
DESCRIPTION
- Good Linearity of hFE
- High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -50V (Min)
- plement to Type 2SC1212
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in low frequency power amplifier...
