2SA743 Description
·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·plement to Type 2SC1212 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low frequency power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO...