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2SA743 - PNP Transistor

General Description

Good Linearity of hFE High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) Complement to Type 2SC1212 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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isc Silicon PNP Power Transistor 2SA743 DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Complement to Type 2SC1212 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 0.75 W 8 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.