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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SB1001 Datasheet

Silicon PNP Epitaxial Transistor

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2SB1001
Silicon PNP Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SD1367
Outline
UPAK
1
2
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SB1001 Datasheet

Silicon PNP Epitaxial Transistor

No Preview Available !

2SB1001
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
VCBO
VCEO
VEBO
IC
i *1
C(peak)
PC * 2
Tj
–20
–16
–6
–2
–3
1
150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 ms, Duty cycle 20%
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max
Collector to base breakdown
voltage
V(BR)CBO
–20
Collector to emitter breakdown V(BR)CEO –16
voltage
Emitter to base breakdown
V(BR)EBO
–6
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
I CBO
I EBO
hFE*1
——
——
100 —
–0.1
–0.1
320
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Gain bandwidth product
VCE(sat)
VBE(sat)
fT
–0.15 –0.3
–1.0 –1.2
150 —
Collector output capacitance Cob — 50 —
Note: 1. The 2SB1001 is grouped by hFE as follows.
Mark
BH
BJ
hFE 100 to 200 160 to 320
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test conditions
IC = –10 µA, IE = 0
IC = –1 mA, RBE =
IE = –10 µA, IC = 0
VCB = –16 V, IE = 0
VEB = –5 V, IC = 0
VCE = –2 V,
IC = –0.1 A (Pulse test)
IC = –1 A,
IB = –0.1 A (Pulse test)
IC = –1 A,
IB = –0.1 A (Pulse test)
VCE = –2 V,
IC = –10 mA
VCB = –10 V, IE = 0,
f = 1 MHz
2


Part Number 2SB1001
Description Silicon PNP Epitaxial Transistor
Maker Hitachi Semiconductor
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2SB1001 Datasheet PDF






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