2SC5024 Datasheet PDF - Hitachi Semiconductor Silicon NPN Epitaxial Type Transistor Specs

2SC5024 - Silicon NPN Epitaxial Type Transistor

Datasheet Summary

Features

Excellent high frequency characteristics fT = 300 MHz typ.
High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ.
Suitable for wide band video amplifier.
Complimentary pair of 2SA1889 TO.
126FM 123 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit.

Datasheet Details

Part number	2SC5024
Manufacturer	Hitachi Semiconductor
File Size	11.20 KB
Description	Silicon NPN Epitaxial Type Transistor
Datasheet	2SC5024 Datasheet
Additional preview pages of the 2SC5024 datasheet.

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Full PDF Text Transcription

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2SC5024 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 300 MHz typ • High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier • Complimentary pair of 2SA1889 TO–126FM 123 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————————————————————————— Collector to base voltage VCBO 200 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 200 V ——————————————————————————————————————————— Emitter to base voltage VEBO 4 V ——————————————————————————————————————————— Collector current IC 0.

Published: Jul 4, 2015 |