Datasheet4U Logo Datasheet4U.com

2SC5022 - NPN TRANSISTOR

Features

  • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C (peak) PC Tj Tstg Ratings 1500 1500 6 20 40 2 150.
  • 55 to +150 Unit V V V mA mA W °C °C Electrical Characteris.

📥 Download Datasheet

📁 Similar Datasheet

  • 2SC5022 - Silicon NPN Transistor (Renesas)
  • 2SC5021 - NPN TRANSISTOR (Panasonic Semiconductor)
  • 2SC5025 - Silicon NPN Transistor (Hitachi)
  • 2SC5026 - NPN Transistor (Panasonic Semiconductor)
  • 2SC5026 - Silicon NPN Transistor (Kexin)
  • 2SC5026G - Silicon NPN Transistor (Panasonic)
  • 2SC5027 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SC5027 - Silicon NPN Transistor (Inchange Semiconductor)
  • 2SC5027 - NPN SILICON TRANSISTOR (UTC)
  • 2SC5027 - Silicon NPN Transistor (Nell)
Other Datasheets by Hitachi Semiconductor

Full PDF Text Transcription

Click to expand full text
2SC5022 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM 12 3 1. Base 2. Collector 3.
Published: |